| 20 nm wavelengty tunable singlemode picosecond pulse generation at 1.3 μm by self-seeded gain-switched semiconductor laser M Schell, D Huhse, AG Weber, G Fischbeck, D Bimberg, DS Tarasov, ... Electronics Letters 28 (23), 2154-2155, 1992 | 67 | 1992 |
| Generation of electrically wavelength tunable (Δλ= 40 nm) singlemode laser pulses from a 1.3 µm Fabry-Perot laser by self-seeding in a fibre-optic configuration D Huhse, M Schell, J Kaessner, D Bimberg, IS Tarasov, AV Gorbachov, ... Electronics Letters 30 (2), 157-158, 1994 | 65 | 1994 |
| InGaAsSb growth from Sb-rich solutions VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil'ev, NN Faleev Journal of crystal growth 180 (1), 34-39, 1997 | 18 | 1997 |
| Visible luminescence of dedoped DBU-treated PEDOT: PSS films I Cruz-Cruz, M Reyes-Reyes, IA Rosales-Gallegos, AY Gorbatchev, ... The Journal of Physical Chemistry C 119 (33), 19305-19311, 2015 | 17 | 2015 |
| Encapsulation of the Fullerene Derivative [6,6]-Phenyl-C61-Butyric Acid Methyl Ester inside Micellar Structures JM Nápoles-Duarte, R López-Sandoval, AY Gorbatchev, M Reyes-Reyes, ... The Journal of Physical Chemistry C 113 (31), 13677-13682, 2009 | 11 | 2009 |
| Study of the pseudo-(1× 1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE E Cruz-Hernández, M Ramirez-Lopez, M Pérez-Caro, PG Mani-Gonzalez, ... Journal of crystal growth 378, 295-298, 2013 | 10 | 2013 |
| Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil’ev Journal of electronic materials 28, 959-962, 1999 | 10 | 1999 |
| Investigation of the “composition-pulling or lattice-latching” effect in LPE MP Rodríguez-Torres, AY Gorbatchev, VA Mishurnyi, F De Anda, ... Journal of crystal growth 277 (1-4), 138-142, 2005 | 9 | 2005 |
| Temperature determination by solubility measurements and a study of evaporation of volatile components in LPE VA Mishurnyi, F De Anda, ICH del Castillo, AY Gorbatchev Thin Solid Films 340 (1-2), 24-27, 1999 | 9 | 1999 |
| Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs A Cisneros-de-la-Rosa, IE Cortes-Mestizo, E Cruz-Hernández, ... Journal of Vacuum Science & Technology B 32 (2), 2014 | 8 | 2014 |
| Improvement on the InAs quantum dot size distribution employing high-temperature GaAs (100) substrate treatment N Saucedo-Zeni, AY Gorbatchev, VH Méndez-Garcıa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 8 | 2004 |
| Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy A Del Río-De Santiago, VH Méndez-García, I Martínez-Velis, ... Applied Surface Science 333, 92-95, 2015 | 7 | 2015 |
| Tecnologías epitaxiales de crecimiento de cristales semiconductores VA Mishournyi, IC Hernández, AY Gorbatchev, A Lastras Avance y Perspectiva 21 (1), 21-31, 2002 | 7 | 2002 |
| AlGaAsSb and AlGaInAsSb Growth from Sb‐rich Solutions VA Mishurnyi, F De Anda, AY Gorbatchev, VI Vasil'ev, VM Smirnov, ... Crystal Research and Technology: Journal of Experimental and Industrial …, 1998 | 7 | 1998 |
| Investigation of the phase diagram of the Pb–Ga–Sb system R Hernández-Zarazúa, M Hernández-Sustaita, F De Anda, VA Mishurnyi, ... Thin solid films 461 (2), 233-236, 2004 | 6 | 2004 |
| GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots CA Mercado-Ornelas, IE Cortes-Mestizo, E Eugenio-López, ... Physica E: Low-dimensional Systems and Nanostructures 124, 114217, 2020 | 5 | 2020 |
| InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates E Eugenio-Lopez, M Lopez-Lopez, AY Gorbatchev, LI Espinosa-Vega, ... Physica E: Low-dimensional Systems and Nanostructures 95, 22-26, 2018 | 4 | 2018 |
| Strain and anisotropy effects studied in InAs/GaAs (2 2 1) quantum dashes by Raman spectroscopy LI Espinosa-Vega, E Eugenio-Lopez, JM Gutierrez-Hernandez, ... Journal of Crystal Growth 477, 212-216, 2017 | 4 | 2017 |
| Si-doped AlGaAs/GaAs (6 3 1) A heterostructures grown by MBE as a function of the As-pressure VH Méndez-García, S Shimomura, AY Gorbatchev, E Cruz-Hernández, ... Journal of Crystal Growth 425, 85-88, 2015 | 4 | 2015 |
| Sn doped GaSb grown by liquid phase epitaxy VH Compean-Jasso, F de Anda, VA Mishurnyi, AY Gorbatchev, T Prutskij, ... Thin solid films 548, 168-170, 2013 | 4 | 2013 |
