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Egorov Anton Yurevich
Egorov Anton Yurevich
ITMO University, Connector Optics LLC
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Ultranarrow luminescence lines from single quantum dots
M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ...
Physical Review Letters 74 (20), 4043, 1995
10141995
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
NN Ledentsov, VA Shchukin, M Grundmann, N Kirstaedter, J Böhrer, ...
Physical Review B 54 (12), 8743, 1996
6611996
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ...
Applied physics letters 74 (19), 2815-2817, 1999
5201999
Tamm plasmon polaritons: Slow and spatially compact light
ME Sasin, RP Seisyan, MA Kalitteevski, S Brand, RA Abram, ...
Applied physics letters 92 (25), 2008
4702008
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
N Kirstaedter, OG Schmidt, NN Ledentsov, D Bimberg, VM Ustinov, ...
Applied physics letters 69 (9), 1226-1228, 1996
4151996
Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots
R Heitz, M Grundmann, NN Ledentsov, L Eckey, M Veit, D Bimberg, ...
Applied Physics Letters 68 (3), 361-363, 1996
3361996
Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing
NN Ledentsov, M Grundmann, N Kirstaedter, O Schmidt, R Heitz, J Böhrer, ...
Solid-State Electronics 40 (1-8), 785-798, 1996
3311996
Structural characterization of (In, Ga) As quantum dots in a GaAs matrix
S Ruvimov, P Werner, K Scheerschmidt, U Gösele, J Heydenreich, ...
Physical Review B 51 (20), 14766, 1995
2961995
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
M Hetterich, MD Dawson, AY Egorov, D Bernklau, H Riechert
Applied Physics Letters 76 (8), 1030-1032, 2000
2582000
Monolithic VCSEL with InGaAsN active region emitting at 1.28 µm and CW output power exceeding 500µW at room temperature
G Steinle, H Riechert, AY Egorov
Electronics Letters 37 (2), 1, 2001
2522001
InAs–GaAs quantum pyramid lasers: in situ growth, radiative lifetimes and polarization properties
D Bimberg, NN Ledentsov, M Grundmann, N Kirstaedter, OG Schmidt, ...
Japanese journal of applied physics 35 (2S), 1311, 1996
2081996
Optical properties of heterostructures with InGaAs-GaAs quantum clusters
NN Ledentsov, VM Ustinov, AY Egorov, AE Zhukov, MV Maksimov, ...
Semiconductors 28 (8), 832-834, 1994
2011994
Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing
AO Kosogov, P Werner, U Gösele, NN Ledentsov, D Bimberg, VM Ustinov, ...
Applied Physics Letters 69 (20), 3072-3074, 1996
2001996
8 W continuous wave operation of InGaAsN lasers at 1.3 µm
DA Livshits, AY Egorov, H Riechert
Electronics Letters 36 (16), 1381-1382, 2000
1942000
InAs/GaAs quantum dots radiative recombination from zero‐dimensional states
M Grundmann, NN Ledentsov, R Heitz, L Eckey, J Christen, J Böhrer, ...
physica status solidi (b) 188 (1), 249-258, 1995
1671995
GaN nanowire ultraviolet photodetector with a graphene transparent contact
AV Babichev, H Zhang, P Lavenus, FH Julien, AY Egorov, YT Lin, LW Tu, ...
Applied Physics Letters 103 (20), 2013
1582013
Vertical cavity lasers based on vertically coupled quantum dots
JA Lott, NN Ledentsov, VM Ustinov, AY Egorov, AE Zhukov, PS Kop'ev, ...
Electronics Letters 33 (13), 1150-1150, 1997
1561997
Recombination mechanisms in GaInNAs/GaAs multiple quantum wells
A Kaschner, T Lüttgert, H Born, A Hoffmann, AY Egorov, H Riechert
Applied Physics Letters 78 (10), 1391-1393, 2001
1542001
High power CW operation of InGaAsN lasers at 1.3 µm
AY Egorov, D Bernklau, D Livshits, V Ustinov, ZI Alferov, H Riechert
Electronics Letters 35 (19), 1643-1644, 1999
1491999
Data transmission up to 10Gbit/s with 1.3 µm wavelength InGaAsN VCSELs
G Steinle, F Mederer, M Kicherer, R Michalzik, G Kristen, AY Egorov, ...
Electronics Letters 37 (10), 1, 2001
1412001
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