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Dakhlaoui Hassen
Dakhlaoui Hassen
Imam Abdulrahman Bin Faisal University science physics
Dirección de correo verificada de iau.edu.sa
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Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa (1− x) N double quantum wells operating at 1.55 μm
H Dakhlaoui
Journal of Applied Physics 117 (13), 2015
552015
Tunability of the optical absorption and refractive index changes in step-like and parabolic quantum wells under external electric field
H Dakhlaoui
Optik 168, 416-423, 2018
402018
The effects of doping layer location on the electronic and optical properties of GaN step quantum well
H Dakhlaoui
Superlattices and Microstructures 97, 439-447, 2016
282016
Effect of Si δ-doped layer position on optical absorption in GaAs quantum well under hydrostatic pressure
H Dakhlaoui, S Almansour, E Algrafy
Superlattices and Microstructures 77, 196-208, 2015
282015
Effects of magnetic, electric, and intense laser fields on the optical properties of AlGaAs/GaAs quantum wells for terahertz photodetectors
ALN Aishah, H Dakhlaoui, T Ghrib, BM Wong
Physica B: Condensed Matter 635, 413838, 2022
262022
Tuning the linear and nonlinear optical properties in double and triple δ− doped GaAs semiconductor: Impact of electric and magnetic fields
H Dakhlaoui, M Nefzi
Superlattices and Microstructures 136, 106292, 2019
242019
Enhancement of the optical absorption in MgZnO/ZnO quantum well under external electric field
H Dakhlaoui, M Nefzi
Optik 157, 1342-1349, 2018
242018
External fields controlling the nonlinear optical properties of quantum cascade laser based on staircase-like quantum wells
H Dakhlaoui, JA Vinasco, CA Duque
Superlattices and Microstructures 155, 106885, 2021
232021
Quantum size and magnesium composition effects on the optical absorption in the MgxZn (1− x) O/ZnO quantum well
H ben Bechir Dakhlaoui, N Mouna
Chemical Physics Letters 693, 40-45, 2018
202018
Optical properties of a quantum well with Razavy confinement potential: Role of applied external fields
A Turkoglu, H Dakhlaoui, ME Mora-Ramos, F Ungan
Physica E: Low-dimensional Systems and Nanostructures 134, 114919, 2021
192021
Modulating the conductance in graphene nanoribbons with multi-barriers under an applied voltage
H Dakhlaoui, S Almansour, W Belhadj, BM Wong
Results in Physics 27, 104505, 2021
172021
Theoretical investigation of linear and nonlinear optical properties in an heterostructure based on triple parabolic barriers: Effects of external fields
H Dakhlaoui, F Ungan, JC Martínez-Orozco, ME Mora-Ramos
Physica B: Condensed Matter 607, 412782, 2021
172021
Magnetic properties in III–V diluted magnetic semiconductor quantum wells
H Dakhlaoui, S Jaziri
Physica B: Condensed Matter 355 (1-4), 401-407, 2005
162005
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural …
H Dakhlaoui, I Altuntas, ME Mora-Ramos, F Ungan
The European Physical Journal Plus 136 (8), 894, 2021
152021
Influence of doping layer concentration on the electronic transitions in symmetric AlxGa (1⿿ x) N/GaN double quantum wells
H Dakhlaoui
Optik-International Journal for Light and Electron Optics 124 (18), 3726-3729, 2013
152013
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
I Altuntas, H Dakhlaoui, ME Mora-Ramos, F Ungan
The European Physical Journal Plus 136 (11), 1174, 2021
142021
Intersubband transitions in InxAl (1− x) N/InyGa (1− y) N quantum well operating at 1.55 μm
H Dakhlaoui
Chinese Physics B 23 (9), 097304, 2014
142014
Theoretical study of electronic transmission in resonant tunneling diodes based on GaAs/AlGaAs double barriers under bias voltage
SA Almansour, D Hassen
Optics and Photonics Journal 2014, 2014
142014
The effect of hydrostatic pressure, temperature and magnetic field on the nonlinear optical properties of asymmetrical Gaussian potential quantum wells
S Almansour, H Dakhlaoui, E Algrafy
Chin. Phys. Lett 33, 027301, 2016
132016
Quantum Size and Doping Concentration Effects on the Current-Voltage Characteristics in GaN Resonant Tunneling Diodes
H Dakhlaoui
Chinese Physics Letters 30 (7), 077304, 2013
132013
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Artículos 1–20