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Ilija Dukovski
Ilija Dukovski
Research Associate Professor, Bioinformatics Program, Boston University
Verified email at bu.edu
Title
Cited by
Cited by
Year
Metabolic resource allocation in individual microbes determines ecosystem interactions and spatial dynamics
WR Harcombe, WJ Riehl, I Dukovski, BR Granger, A Betts, AH Lang, ...
Cell reports 7 (4), 1104-1115, 2014
5382014
Langevin dynamics simulations of early stage shish-kebab crystallization of polymers in extensional flow
I Dukovski, M Muthukumar
The Journal of chemical physics 118 (14), 6648-6655, 2003
2462003
Method for making semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,830,964, 2004
146*2004
Semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,958,486, 2005
1112005
A metabolic modeling platform for the computation of microbial ecosystems in time and space (COMETS)
I Dukovski, D Bajić, JM Chacón, M Quintin, JCC Vila, S Sulheim, ...
Nature protocols 16 (11), 5030-5082, 2021
1102021
Method for making semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,833,294, 2004
1072004
Method for making an electronic device including a poled superlattice having a net electrical dipole moment
S Halilov, X Huang, I Dukovski, JACSF Yiptong, RJ Mears, M Hytha, ...
US Patent 7,517,702, 2009
1042009
Multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 8,389,974, 2013
1032013
Method for making a semiconductor device comprising a superlattice dielectric interface layer
RJ Mears, M Hytha, SA Kreps, RJ Stephenson, JACSF Yiptong, ...
US Patent 7,446,002, 2008
1032008
Semiconductor device including MOSFET having band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,897,472, 2005
1012005
Semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,891,188, 2005
1012005
Spintronic devices with constrained spintronic dopant
X Huang, S Halilov, JA Yiptong, I Dukovski, M Hytha, R Mears
US Patent App. 11/687,422, 2008
992008
Method for making a multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 7,863,066, 2011
982011
Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 7,435,988, 2008
982008
Multiple-wavelength opto-electronic device including a superlattice
RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ...
US Patent 7,880,161, 2011
972011
Semiconductor device including band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 6,952,018, 2005
962005
Methods of making spintronic devices with constrained spintronic dopant
X Huang, S Halilov, JACSF Yiptong, I Dukovski, M Hytha, RJ Mears
US Patent 7,625,767, 2009
952009
Method for making a semiconductor device comprising a lattice matching layer
I Dukovski, RJ Stephenson, JACSF Yiptong, S Halilov, RJ Mears, ...
US Patent 7,700,447, 2010
942010
Semiconductor device including MOSFET having band-engineered superlattice
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 7,303,948, 2007
942007
Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel
RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski
US Patent 7,265,002, 2007
942007
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