| High-power (> 10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers A Al-Muhanna, LJ Mawst, D Botez, DZ Garbuzov, RU Martinelli, ... Applied Physics Letters 73 (9), 1182-1184, 1998 | 247 | 1998 |
| 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers LJ Mawst, A Bhattacharya, J Lopez, D Botez, DZ Garbuzov, L DeMarco, ... Applied Physics Letters 69 (11), 1532-1534, 1996 | 239 | 1996 |
| Multiwavelength 10-GHz picosecond pulse generation from a single-stripe semiconductor diode laser H Shi, J Finlay, GA Alphonse, JC Connolly, PJ Delfyett Ieee Photonics Technology Letters 9 (11), 1439-1441, 1997 | 209 | 1997 |
| 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers DZ Garbuzov, H Lee, V Khalfin, R Martinelli, JC Connolly, GL Belenky IEEE Photonics Technology Letters 11 (7), 794-796, 1999 | 204 | 1999 |
| In situ combustion measurements of CO with diode-laser absorption near 2.3 µm J Wang, M Maiorov, DS Baer, DZ Garbuzov, JC Connolly, RK Hanson Applied Optics 39 (30), 5579-5589, 2000 | 167 | 2000 |
| Morphology-dependent resonances of a microsphere–optical fiber system G Griffel, S Arnold, D Taskent, A Serpengüzel, J Connolly, N Morris Optics letters 21 (10), 695-697, 1996 | 164 | 1996 |
| Demonstration of phase correlation in multiwavelength mode-locked semiconductor diode lasers H Shi, I Nitta, A Schober, PJ Delfyett, G Alphonse, J Connolly Optics Letters 24 (4), 238-240, 1999 | 160 | 1999 |
| Ultralow‐loss broadened‐waveguide high‐power 2 μm AlGaAsSb/InGaAsSb/GaSb separate‐confinement quantum‐well lasers DZ Garbuzov, RU Martinelli, H Lee, PK York, RJ Menna, JC Connolly, ... Applied physics letters 69 (14), 2006-2008, 1996 | 153 | 1996 |
| High‐power phase‐locked arrays of index‐guided diode lasers D Botez, JC Connolly Applied physics letters 43 (12), 1096-1098, 1983 | 152 | 1983 |
| Continuous-wave operation of broadened-waveguide W quantum-well diode lasers up to WW Bewley, H Lee, I Vurgaftman, RJ Menna, CL Felix, RU Martinelli, ... Applied Physics Letters 76 (3), 256-258, 2000 | 146 | 2000 |
| Multiwavelength mode-locked dense wavelength division multiplexed optical communication systems JH Abeles, JC Connolly, WE Stephens, RL Camisa US Patent 6,014,237, 2000 | 145 | 2000 |
| 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes DZ Garbuzov, RU Martinelli, H Lee, RJ Menna, PK York, LA DiMarco, ... Applied physics letters 70 (22), 2931-2933, 1997 | 136 | 1997 |
| Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers H Lee, PK York, RJ Menna, RU Martinelli, DZ Garbuzov, SY Narayan, ... Applied physics letters 66 (15), 1942-1944, 1995 | 130 | 1995 |
| Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes DZ Garbuzov, JC Connolly, RF Karlicek Jr, IT Ferguson US Patent 6,404,125, 2002 | 125 | 2002 |
| 1.5 µm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power D Garbuzov, L Xu, SR Forrest, R Menna, R Martinelli, JC Connolly Electronics Letters 32 (18), 1717-1719, 1996 | 123 | 1996 |
| A potential remote sensor of CO in vehicle exhausts using 2.3 µm diode lasers J Wang, M Maiorov, JB Jeffries, DZ Garbuzov, JC Connolly, RK Hanson Measurement Science and Technology 11 (11), 1576, 2000 | 94 | 2000 |
| Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching G Griffel, JH Abeles, RJ Menna, AM Braun, JC Connolly, M King IEEE Photonics Technology Letters 12 (2), 146-148, 2000 | 92 | 2000 |
| Above-room-temperature optically pumped midinfrared W lasers WW Bewley, CL Felix, EH Aifer, I Vurgaftman, LJ Olafsen, JR Meyer, ... Applied physics letters 73 (26), 3833-3835, 1998 | 91 | 1998 |
| Distributed feedback-channeled substrate planar semiconductor laser EA Vangieson, PK York, JC Connolly US Patent 5,295,150, 1994 | 86 | 1994 |
| Type-II mid-infrared lasers JR Meyer, WW Bewley, I Vurgaftman, CL Felix, LJ Olafsen, EH Aifer, ... In-Plane Semiconductor Lasers IV 3947, 100-109, 2000 | 82 | 2000 |
