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The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature
H Uslu, M Yıldırım, Ş Altındal, P Durmuş
Radiation Physics and Chemistry 81 (4), 362-369, 2012
322012
Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures
HG Çetinkaya, M Yıldırım, P Durmuş, Ş Altındal
Journal of Alloys and Compounds 728, 896-901, 2017
262017
Effect of iron phthalocyanine (FePc) concentration on electrical and dielectric properties of the nematic liquid crystal composites
M Yıldırım, O Köysal, G Önsal, E Gümüş
Journal of Molecular Liquids 223, 868-872, 2016
252016
Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer
P Durmuş, M Yıldırım, Ş Altındal
Current Applied Physics 13 (8), 1630-1636, 2013
242013
Influence of interfacial layer thickness on frequency dependent dielectric properties and electrical conductivity in Al/Bi4Ti3O12/p-Si structures
P Durmuş, M Yıldırım
Journal of Vacuum Science & Technology A 32 (6), 2014
232014
Investigation of the inhomogeneous barrier height of an Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height
M Gökçen, M Yıldırım
Chinese Physics B 21 (12), 128502, 2012
232012
On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K
H Durmuş, M Yıldırım, Ş Altındal
Journal of Materials Science: Materials in Electronics 30, 9029-9037, 2019
222019
Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity
HG Çetinkaya, M Yıldırım, P Durmuş, Ş Altındal
Journal of Alloys and Compounds 721, 750-756, 2017
192017
UV illumination effects on electrical characteristics of metal–polymer–semiconductor diodes fabricated with new poly (propylene glycol)-b-polystyrene block copolymer
M Gökçen, M Yıldırım, A Demir, A Allı, S Allı, B Hazer
Composites Part B: Engineering 57, 8-12, 2014
192014
A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/ZV) characteristics
Ö Sevgili, M Yıldırım, Y Azizian-Kalandaragh, Ş Altındal
Applied Physics A 126, 1-9, 2020
162020
A comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures
M Yildirim, M Gökçen
Bulletin of Materials Science 37, 257-262, 2014
162014
Current conduction and steady-state photoconductivity in photodiodes with bismuth titanate interlayer
M Yıldırım
Thin Solid Films 615, 300-304, 2016
142016
Dielectric characteristics of gamma irradiated Au/SnO2/n-Si/Au (MOS) capacitor
A Tataroğlu, M Yıldırım, HM Baran
Materials science in semiconductor processing 28, 89-93, 2014
142014
Dielectric and AC electrical conductivity characteristics of liquid crystal doped with graphene
M Gökçen, M Yıldırım, O Köysal
The European Physical Journal-Applied Physics 60 (3), 30104, 2012
142012
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
H Durmuş, A Tataroğlu, Ş Altındal, M Yıldırım
Current Applied Physics 44, 85-89, 2022
132022
Synthesis & chemical and dielectric characterization of poly (linoleic acid)-g-poly (dimethylaminoethyl methacrylate): A novel high-κ graft copolymer
M Yıldırım, A Allı, G Önsal, N Gök, O Köysal
Composites Part B: Engineering 117, 43-48, 2017
132017
Investigation on dielectric properties of atomic layer deposited Al2O3 dielectric films
DE Yıldız, M Yıldırım, M Gökçen
Journal of Vacuum Science & Technology A 32 (3), 2014
122014
Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature
M Yıldırım, C Şahin, Ş Altındal, P Durmuş
Journal of Electronic Materials 46, 1895-1901, 2017
112017
Gaussian distribution of inhomogeneous barrier height in Au/n-Si (111) Schottky barrier diodes at low temperatures
P Durmuş, M Yıldırım
Materials science in semiconductor processing 27, 145-149, 2014
112014
Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p-Si and Al/Bi4Ti3O12/p-Si structures by using the admittance …
M Yıldırım, P Durmuş, Ş Altındal
Chinese Physics B 22 (10), 108502, 2013
112013
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