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Isaac Martínez-Velis
Isaac Martínez-Velis
CENTRO ESTATAL DE CANCEROLOGIA DEL ESTADO DE DURANGO
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Study of structural properties of cubic InN films on GaAs (001) substrates by molecular beam epitaxy and migration enhanced epitaxy
YL Casallas-Moreno, M Pérez-Caro, S Gallardo-Hernández, ...
Journal of Applied Physics 113 (21), 2013
122013
Self-assembly of compositionally modulated Ga1− xMnxAs multilayers during molecular beam epitaxy
S Gallardo-Hernández, I Martinez-Velis, M Ramirez-Lopez, Y Kudriatsev, ...
Applied Physics Letters 103 (19), 2013
92013
Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy
A Del Río-De Santiago, VH Méndez-García, I Martínez-Velis, ...
Applied Surface Science 333, 92-95, 2015
72015
Effects of in situ annealing of GaAs (100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy
H Morales-Cortés, C Mejia-Garcia, VH Méndez-García, D Vázquez-Cortés, ...
Nanotechnology 21 (13), 134012, 2010
32010
Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates
VH Méndez‐García, I Martínez‐Velis, JS Rojas‐Ramirez, ...
physica status solidi (a) 206 (5), 836-841, 2009
32009
Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial films
LI Espinosa-Vega, AG Rodriguez, E Cruz-Hernandez, I Martinez-Veliz, ...
Journal of crystal growth 378, 105-108, 2013
22013
Optical and electrical study of cap layer effect in QHE devices with double-2DEG
L Zamora-Peredo, I Cortes-Mestizo, L García-Gonzáez, ...
MRS Online Proceedings Library (OPL) 1617, 31-36, 2013
22013
Photoreflectance study of GaMnAs layers grown by MBE
I Martínez-Velis, R Contreras-Guerrero, JS Rojas-Ramírez, ...
Journal of crystal growth 323 (1), 344-347, 2011
22011
Self‐Assembly of Nanostructures on (631)‐Oriented GaAs Substrates
M López‐López, E Cruz‐Hernández, I Martínez‐Velis, J Rojas‐Ramírez, ...
AIP Conference Proceedings 960 (1), 210-215, 2007
22007
Two orders of magnitude reduction in the temperature dependent resistivity of grown on (6 3 1) GaAs insulating substrates
VT Rangel-Kuopp, I Martinez-Velis, S Gallardo-Hernandez, ...
AIP Conference Proceedings 1566 (1), 33-34, 2013
12013
Group III-nitrides nanostructures
M Pérez-Caro, M Ramirez-Lopez, JS Rojas-Ramírez, I Martínez-Velis, ...
AIP Conference Proceedings 1420 (1), 164-168, 2012
12012
Molecular beam epitaxy growth of AlGaAs on the (631)-oriented GaAs substrates
VH Méndez-García, MG Ramírez-Elías, A Gorbatchev, E Cruz-Hernández, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
12008
Effect of thermal treatment on points defects of Al-N codoped ZnO films
LZ Peredo, IM Velis, A Martínez, JH Torres, LG González, LD Lvova, ...
Matéria (Rio de Janeiro) 23 (02), 12120, 2018
2018
Group III-Nitrides Nanostructures
I Martínez-Velis, S Gallardo, BJ Babu, S Velumani
AIP Conference Proceedings 1420, 164, 2012
2012
Raman and photoreflectance study of InAs quantum dots on GaAs (100) substrates subjected to an in-situ
H Morales-Cortés, C Mejia-Garcia, JS Rojas-Ramírez, I Martínez-Velis, ...
Journal of the Australian Ceramic Society 48 (1), 44-49, 2012
2012
Autoensamblaje de nanoestructuras semiconductoras
M López-López, E Cruz-Hernández, I Martínez-Velis, JS Rojas-Ramírez, ...
Respuestas 12 (2), 47-51, 2007
2007
Self Assembly of semiconductor nanostructures
ML López, EC Hernández, IM Velis, JSR Ramírez, MR López, ÁOP Mora
Respuestas 12 (2), 47-51, 2007
2007
Wires Formation in the Molecular Beam Epitaxy Growth of GaAs/GaAs (631) Characterized by RHEED
E Cruz-Hernández, JS Rojas-Ramírez, J Hernández-Rosas, ...
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