In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives A Amirsoleimani, F Alibart, V Yon, J Xu, MR Pazhouhandeh, S Ecoffey, ...
Advanced Intelligent Systems 2 (11), 2000115, 2020
150 2020 Selective palladium electrochemical deposition onto AFM-scratched silicon surfaces L Santinacci, T Djenizian, H Hildebrand, S Ecoffey, H Mokdad, ...
Electrochimica acta 48 (20-22), 3123-3130, 2003
56 2003 SETMOS: a Novel True Hybrid SET-CMOS Cell with High Current and Coulomb Blockade for Future Nano-scale Analog ICs S Mahapatra, V Pott, S Ecoffey, C Wasshuber, K Banerjee, J Tringe, ...
IEDM, 2003
34 * 2003 Low-pressure chemical vapour deposition of nanograin polysilicon ultra-thin films S Ecoffey, D Bouvet, AM Ionescu, P Fazan
Nanotechnology 13 (3), 290, 2002
34 2002 SiO2 shallow nanostructures ICP etching using ZEP electroresist M Guilmain, A Jaouad, S Ecoffey, D Drouin
Microelectronic Engineering, 2011
28 2011 Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing A El Mesoudy, G Lamri, R Dawant, J Arias-Zapata, P Gliech, Y Beilliard, ...
arXiv e-prints, arXiv: 2106.11808, 2021
22 2021 A damascene platform for controlled ultra-thin nanowire fabrication M Guilmain, T Labbaye, F Dellenbach, C Nauenheim, D Drouin, S Ecoffey
Nanotechnology 24 (24), 245305, 2013
21 2013 Investigation of resistive switching and transport mechanisms of Al2O3/TiO2− x memristors under cryogenic conditions (1.5 K) Y Beilliard, F Paquette, F Brousseau, S Ecoffey, F Alibart, D Drouin
AIP Advances 10 (2), 2020
18 2020 Nano-wires for room temperature operated hybrid CMOS-NANO integrated circuits S Ecoffey, V Pott, D Bouvet, M Mazza, S Mahapatra, A Schmid, ...
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC …, 2005
17 2005 Band gap narrowing induced by oxygen vacancies in reactively sputtered TiO2 thin films A El Mesoudy, D Machon, A Ruediger, A Jaouad, F Alibart, S Ecoffey, ...
Thin Solid Films 769, 139737, 2023
16 2023 Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering K El Hajjam, N Baboux, F Calmon, A Souifi, O Poncelet, LA Francis, ...
Journal of Vacuum Science & Technology A 32 (1), 2014
16 2014 A hybrid CMOS–SET co-fabrication platform using nano-grain polysilicon wires S Ecoffey, V Pott, S Mahapatra, D Bouvet, P Fazan, AM Ionescu
Microelectronic engineering 78, 239-243, 2005
15 2005 Tunnel Junction Engineering for Optimized Metallic Single-Electron Transistor KG El Hajjam, MA Bounouar, N Baboux, S Ecoffey, M Guilmain, E Puyoo, ...
IEEE Transactions on Electron Devices 62 (9), 2998-3003, 2015
14 2015 Fabrication of Planar Back End of Line Compatible HfO Complementary Resistive Switches M Labalette, S Jeannot, S Blonkowski, Y Beilliard, S Ecoffey, A Souifi, ...
IEEE Transactions on Nanotechnology 16 (5), 745-751, 2017
11 2017 Single Electron Transistor Analytical Model for Hybrid Circuit Design MA Bounouar, F Calmon, A Beaumont, M Guilmain, W Xuan, S Ecoffey, ...
11 2011 Technology platform for the fabrication of titanium nanostructures S Ecoffey, M Guilmain, JF Morissette, F Bourque, J Pont, BL Sang, ...
11 2011 Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories Y Beilliard, F Paquette, F Brousseau, S Ecoffey, F Alibart, D Drouin
Nanotechnology 31 (44), 445205, 2020
10 2020 A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon YA Bioud, MN Beattie, A Boucherif, M Jellit, R Stricher, S Ecoffey, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII …, 2019
10 2019 Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI GT Ayele, S Monfray, S Ecoffey, F Boeuf, JP Cloarec, D Drouin, A Souifi
IEEE Journal of the Electron Devices Society 6, 1026-1032, 2018
10 2018 CODEX: Stochastic Encoding Method to Relax Resistive Crossbar Accelerator Design Requirements T Liu, A Amirsoleimani, J Xu, F Alibart, Y Beilliard, S Ecoffey, D Drouin, ...
IEEE Transactions on Circuits and Systems II: Express Briefs 69 (8), 3356-3360, 2022
9 2022