| Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes S Alialy, Ş Altındal, EE Tanrıkulu, DE Yıldız Journal of Applied Physics 116 (8), 2014 | 88 | 2014 |
| On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(% 7 Zn-PVA)/p-Si (MPS) structure EE Tanrıkulu, S Demirezen, Ş Altındal, İ Uslu Journal of Materials Science: Materials in Electronics 29, 2890-2898, 2018 | 61 | 2018 |
| Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes EE Tanrıkulu, DE Yıldız, A Günen, Ş Altındal Physica Scripta 90 (9), 095801, 2015 | 48 | 2015 |
| The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors S Demirezen, EE Tanrıkulu, Ş Altındal Indian Journal of Physics 93, 739-747, 2019 | 34 | 2019 |
| On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C29H32O17)/p-Si (MPS) structures in wide range of frequency and voltage EE Tanrıkulu, SA Yerişkin Physica B: Condensed Matter 623, 413345, 2021 | 27 | 2021 |
| Preparation of (CuS–PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS … E Erbilen Tanrıkulu, Ş Altındal, Y Azizian-Kalandaragh Journal of Materials Science: Materials in Electronics 29, 11801-11811, 2018 | 25 | 2018 |
| Analysis of electrical characteristics and conduction mechanisms in the Al/(% 7 Zn-doped PVA)/p-Si (MPS) structure at room temperature EE Tanrıkulu, S Demirezen, Ş Altındal, İ Uslu Journal of Materials Science: Materials in Electronics 28, 8844-8856, 2017 | 23 | 2017 |
| Electrical characterization of MIS diode prepared by magnetron sputtering H Tanrıkulu, A Tataroğlu, EE Tanrıkulu, AB Uluşan NISCAIR-CSIR, India, 2018 | 22 | 2018 |
| Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency SA Yerişkin, EE Tanrıkulu, M Ulusoy Materials Chemistry and Physics 303, 127788, 2023 | 19 | 2023 |
| Variation of the surface states and series resistance depending on voltage, and their effects on the electrical features of a Schottky structure with CdZnO interface E Erbilen Tanrıkulu, İ Taşçıoğlu Journal of Electronic Materials 52 (4), 2432-2440, 2023 | 10 | 2023 |
| A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS: GO (1: 1) and (ZnCdS: GO (1: 0.5) doped PVP interlayer using current–voltage (I–V) and … ÇŞ Güçlü, EE Tanrıkulu, A Dere, Ş Altındal, Y Azizian-Kalandaragh Journal of Materials Science: Materials in Electronics 34 (28), 1909, 2023 | 6 | 2023 |
| Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayers E Erbilen Tanrıkulu Journal of Materials Science: Materials in Electronics 34 (1), 63, 2023 | 5 | 2023 |
| Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interface EE Tanrıkulu Physica Scripta 98 (1), 015804, 2022 | 5 | 2022 |
| Effect of vanadium substitution on the microstructural and superconducting properties of Tl2Ba2Ca2− xVxCu3Oy superconductors E Erbilen, Ş Çavdar, H Koralay, A Günen Physica B: Condensed Matter 413, 36-39, 2013 | 5* | 2013 |
| Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti: DLC interlayer EE Tanrıkulu, Ö Berkün, M Ulusoy, B Avar, H Durmuş, Ş Altındal Materials Today Communications 38, 107992, 2024 | 3 | 2024 |
| On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies E Erbilen Tanrıkulu, B Akın Journal of Electronic Materials 51 (8), 4437-4445, 2022 | 2 | 2022 |
| Voltage and frequency reliant interface traps and their lifetimes of the MPS structures interlayered with CdTe: PVA via the admittance method CS Guclu, Ş Altındal, EE Tanrikulu Physica B: Condensed Matter 677, 415703, 2024 | 1 | 2024 |
| Correction: Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO: PVP)/n-Si structures by using the … ÇŞ Güçlü, EE Tanrıkulu, M Ulusoy, Y Azizian-Kalandaragh, Ş Altındal Journal of Materials Science: Materials in Electronics 35 (8), 591, 2024 | | 2024 |
| Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO: PVP)/n-Si structures by using the conductance method ÇŞ Güçlü, EE Tanrıkulu, M Ulusoy, YA Kalandargh, Ş Altındal Journal of Materials Science: Materials in Electronics 35 (5), 348, 2024 | | 2024 |
| Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method EE TANRIKULU Journal of the Institute of Science and Technology 9 (3), 1359-1366, 0 | | |
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