| Cobalt polishing with reduced galvanic corrosion at copper/cobalt interface using hydrogen peroxide as an oxidizer in colloidal silica-based slurries BC Peethala, HP Amanapu, URK Lagudu, SV Babu Journal of The Electrochemical Society 159 (6), H582, 2012 | 99 | 2012 |
| Controlling the galvanic corrosion of copper during chemical mechanical planarization of ruthenium barrier films BC Peethala, D Roy, SV Babu Electrochemical and Solid-State Letters 14 (7), H306, 2011 | 82 | 2011 |
| Ruthenium polishing using potassium periodate as the oxidizer and silica abrasives BC Peethala, SV Babu Journal of The Electrochemical Society 158 (3), H271, 2011 | 76 | 2011 |
| Citric acid as a complexing agent in chemical mechanical polishing slurries for cobalt films for interconnect applications R Popuri, KV Sagi, SR Alety, BC Peethala, H Amanapu, R Patlolla, ... ECS Journal of Solid State Science and Technology 6 (9), P594, 2017 | 74 | 2017 |
| Advanced manganese/manganese nitride cap/etch mask for air gap formation scheme in nanocopper low-K interconnect SM Gates, EE Huang, J Lee, SV Nguyen, BC Peethala, CJ Penny, ... US Patent 9,349,687, 2016 | 67 | 2016 |
| Future on-chip interconnect metallization and electromigration CK Hu, J Kelly, H Huang, K Motoyama, H Shobha, Y Ostrovski, JHC Chen, ... 2018 ieee international reliability physics symposium (irps), 4F. 1-1-4F. 1-6, 2018 | 65 | 2018 |
| Role of different additives on silicon dioxide film removal rate during chemical mechanical polishing using ceria-based dispersions PRV Dandu, BC Peethala, SV Babu Journal of The Electrochemical Society 157 (9), H869, 2010 | 60 | 2010 |
| Tungsten and cobalt metallization: A material study for MOL local interconnects V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 57 | 2016 |
| Experimental study of nanoscale Co damascene BEOL interconnect structures J Kelly, JHC Chen, H Huang, CK Hu, E Liniger, R Patlolla, B Peethala, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 53 | 2016 |
| Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires CK Hu, J Kelly, JHC Chen, H Huang, Y Ostrovski, R Patlolla, B Peethala, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 44 | 2017 |
| Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node BD Briggs, CB Peethala, DL Rath, J Lee, S Nguyen, NV LiCausi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2017 | 38 | 2017 |
| BEOL process integration for the 7 nm technology node T Standaert, G Beique, HC Chen, ST Chen, B Hamieh, J Lee, ... 2016 IEEE international interconnect technology conference/advanced …, 2016 | 37 | 2016 |
| Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology † P Batra, S Skordas, D LaTulipe, K Winstel, C Kothandaraman, B Himmel, ... Journal of Low Power Electronics and Applications 4 (2), 77-89, 2014 | 37 | 2014 |
| Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions NK Penta, BC Peethala, HP Amanapu, A Melman, SV Babu Colloids and Surfaces A: Physicochemical and Engineering Aspects 429, 67-73, 2013 | 35 | 2013 |
| Electrochemical investigation of surface reactions for chemically promoted chemical mechanical polishing of TaN in tartaric acid solutions S Janjam, BC Peethala, JP Zheng, SV Babu, D Roy Materials Chemistry and Physics 123 (2-3), 521-528, 2010 | 31 | 2010 |
| Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries NK Penta, HP Amanapu, BC Peethala, SV Babu Applied surface science 283, 986-992, 2013 | 30 | 2013 |
| Chemical mechanical planarization of TaN wafers using oxalic and tartaric acid based slurries S Janjam, BC Peethala, D Roy, SV Babu Electrochemical and Solid-State Letters 13 (1), H1, 2009 | 28 | 2009 |
| Silicon nitride film removal during chemical mechanical polishing using ceria-based dispersions PRV Dandu, BC Peethala, HP Amanapu, SV Babu Journal of The Electrochemical Society 158 (8), H763, 2011 | 27 | 2011 |
| Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node T Nogami, X Zhang, J Kelly, B Briggs, H You, R Patlolla, H Huang, ... 2017 Symposium on VLSI Technology, T148-T149, 2017 | 25 | 2017 |
| SiARC removal with plasma etch and fluorinated wet chemical solution combination Y Mignot, BC Peethala, S Siddiqui US Patent 9,508,560, 2016 | 24 | 2016 |
S.V. BabuClarkson UniversityDirección de correo verificada de clarkson.edu
