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Dr. Sahar Alialy
Dr. Sahar Alialy
MFG Operation Manager at Intel Ireland. Former Post Doctoral Research Fellow at Trinity College
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Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes
S Alialy, Ş Altındal, EE Tanrıkulu, DE Yıldız
Journal of Applied Physics 116 (8), 2014
882014
The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method
A Kaya, S Alialy, S Demirezen, M Balbaşı, SA Yerişkin, A Aytimur
Ceramics International 42 (2), 3322-3329, 2016
802016
A comparative study on electrical characteristics of Au/N-Si Schottky diodes, with and without Bi-doped PVA interfacial layer in dark and under illumination at room temperature
S Alialy, H Tecimer, H Uslu, Ş Altındal
J Nanomed Nanotechol 4 (3), 1000167, 2013
582013
Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy …
HG Çetinkaya, S Alialy, Ş Altındal, A Kaya, I Uslu
Journal of Materials Science: Materials in Electronics 26, 3186-3195, 2015
372015
Electronic transport of Au/(Ca1. 9Pr0. 1Co4Ox)/n-Si structures analysed over a wide temperature range
S Alialy, A Kaya, E Marıl, Ş Altındal, İ Uslu
Philosophical Magazine 95 (13), 1448-1461, 2015
222015
Switching at the contacts in Ge9Sb1Te5 phase-change nanowire devices
S Alialy, M Gabriel, F Davitt, JD Holmes, JJ Boland
Nanotechnology 30 (33), 335706, 2019
62019
Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO2/n-4H- SiC Structure
DEY S. Alialy, S. Altindal, E. E. Tanrikulu
Journal of Nanoelectronics and Optoelectronics 11 (DOI: 10.1166/jno.2016 …, 2016
6*2016
Nonlinear ion drift-diffusion memristance description of TiO 2 RRAM devices
S Alialy, K Esteki, MS Ferreira, JJ Boland, CG da Rocha
Nanoscale Advances 2 (6), 2514-2524, 2020
42020
Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance–Voltage Measurements
S Alialy, A Kaya, I Uslu, S Altındal
CHIN. PHYS. LETT 32 (Doi:10.1088/0256-307X/32/11/116102), 5, 2015
22015
Investigation of negative dielectric constant in Au/1% graphene (GP) doped-CaPrCoO/n-Si structures at forward biases using impedance spectroscopy analysis.
H Çetinkaya, S Alialy, Ş Altındal, A Kaya, İ Uslu
Journal of Materials Science: Materials in Electronics 26 (5), 2015
2015
Determination of the mass attenuation coefficient in undoped and BN doped MgB2 superconductor samples as a function of temperature and time
S. Alialy, Ü. Şimşek, D. Yılmaz, D. Korucu, İ. Belenli
International Conference of ISSTC 2015, 2015
2015
Analysis of Capacitance-Voltage (C-V) and Conductance-Voltage (G/w-V) Characteristics of Au/0.03 Graphene-doped PVA/n-Si Structures in Dark and under Various Illumination …
S Alialy, A Kaya, U Ibrahim, S Altindal
International Conference of ISSTC, 2015
2015
Frequency and Voltage Dependence Dielectric Properties and as Conductivity of Au/G-doped PBCoO nanoceramic/n-Si Capacitors at Room Temperature
A Kaya, S Alialy, S Demirezen, A Semsettin
International Conference of ISSTC, Kusadasi, Turkey., 2015
2015
Electric and Photoelectric Properties of Au/0.03 graphene-doped PVA/n-Si Structures in Dark and under Various Illumination levels at room temperature
S Alialy, A Kaya, I Uslu, S Altindal
Internation Conference of ISSTC, 2015
2015
Gaussian distribution of inhomogeneous barrier height in Al/p-GaAs Schottky Barrier Diodes (SBDs)
S Alialy, S Altindal
Applied Physics Society Conference (APS) - Long Beach, USA, 2015
2015
Single Gaussian Distribution (SGD) of Barrier Height in Au/ Ca1.9Pr0.1Co4Ox /n-Si Structure in Wide Temperature Range
S Alialy, A Semsettin, E Maril, A Kaya, S Kocyigit
International Nano science & Nanotechnology for Next Generation Conference, 2014
2014
On The Possible Current-Conduction Mechanisms at Low temperatures in Au/n-GaAs Schottky Barrier Diodes (SBDs)
S Alialy, H Altuntas, S Altundal
Applied Physics Society Conference (APS) - Denver, USA 1, 1325, 2014
2014
Analysis Leakage Current of Au/Tio2/n-4H-SiC MIS Structures using Frenkel-Poole and Schottky Emissions in Temperature Range of 200-380 k
S Alialy, S Altindal, EE Tanrikulu, DE Yildiz
International Semiconductor Science and Technology Conference, Istanbul, Turkey, 2014
2014
Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 Graphene doped PVA n Si Structures in Dark and under Various İlluminations at room temperature
S Alialy, A KAYA, İ USLU, Ş ALTINDAL
Forward and Reverse Bias Current Voltage Characteristics of Au 0 03 graphene doped PVA n Si Structures in Dark and under Various Illuminations at room temperature
A SAHAR, A KAYA, İ USLU, Ş ALTINDAL
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