Excitonic and Raman properties of ZnSe/Zn1−x Cdx Se strained‐layer quantum wells HJ Lozykowski, VK Shastri
Journal of applied physics 69 (5), 3235-3242, 1991
254 1991 Visible cathodoluminescence of GaN doped with Dy, Er, and Tm HJ Lozykowski, WM Jadwisienczak, I Brown
Applied physics letters 74 (8), 1129-1131, 1999
235 1999 Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductors HJ Lozykowski
Physical Review B 48 (24), 17758, 1993
142 1993 Visible cathodoluminescence of Er-doped amorphous AlN thin films K Gurumurugan, H Chen, GR Harp, WM Jadwisienczak, HJ Lozykowski
Applied physics letters 74 (20), 3008-3010, 1999
139 1999 Photoluminescence and cathodoluminescence of GaN doped with Pr HJ Lozykowski, WM Jadwisienczak, I Brown
Journal of Applied Physics 88 (1), 210-222, 2000
133 2000 Visible emission from ZnO doped with rare-earth ions WM Jadwisienczak, HJ Lozykowski, A Xu, B Patel
Journal of electronic materials 31, 776-784, 2002
120 2002 Visible emission from AlN doped with Eu and Tb ions WM Jadwisienczak, HJ Lozykowski, I Berishev, A Bensaoula, IG Brown
Journal of Applied Physics 89 (8), 4384-4390, 2001
113 2001 Luminescence properties of GaN and superlattice doped with europium HJ Lozykowski, WM Jadwisienczak, J Han, IG Brown
Applied Physics Letters 77 (6), 767-769, 2000
107 2000 Photoluminescence and cathodoluminescence of GaN doped with Tb HJ Lozykowski, WM Jadwisienczak, I Brown
Applied Physics Letters 76 (7), 861-863, 2000
90 2000 Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN HJ Lozykowski, WM Jadwisienczak
physica status solidi (b) 244 (6), 2109-2126, 2007
73 2007 Spectroscopic properties of Sm3+ (4f 5) in GaN JB Gruber, B Zandi, HJ Lozykowski, WM Jadwisienczak
Journal of applied physics 91 (5), 2929-2935, 2002
72 2002 Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering WM Jadwisienczak, HJ Lozykowski, F Perjeru, H Chen, M Kordesch, ...
Applied Physics Letters 76 (23), 3376-3378, 2000
70 2000 Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN HJ Lozykowski, WM Jadwisienczak, A Bensaoula, O Monteiro
Microelectronics journal 36 (3-6), 453-455, 2005
63 2005 Optical properties of CdTe/Cd 1− x Zn x Te strained-layer single quantum wells T Li, HJ Lozykowski, JL Reno
Physical Review B 46 (11), 6961, 1992
50 1992 Low-temperature growth of ZnSe crystals R Triboulet, F Rabago, R Legros, H Lozykowski, G Didier
Journal of Crystal Growth 59 (1-2), 172-177, 1982
49 1982 Cathodoluminescence of GaN doped with Sm and Ho HJ Lozykowski, WM Jadwisienczak, I Brown
Solid state communications 110 (5), 253-258, 1999
48 1999 Crystal-field splitting of energy levels in GaN JB Gruber, B Zandi, HJ Lozykowski, WM Jadwisienczak, I Brown
Journal of Applied Physics 89 (12), 7973-7976, 2001
41 2001 Optical properties of Yb ions in GaN epilayer WM Jadwisienczak, HJ Lozykowski
Optical Materials 23 (1-2), 175-181, 2003
39 2003 Spectra and energy levels of in GaN JB Gruber, B Zandi, HJ Lozykowski, WM Jadwisienczak
Journal of applied physics 92 (9), 5127-5132, 2002
38 2002 Catalyst-free synthesis and luminescence of aligned ZnO nanorods A Khan, WM Jadwisienczak, HJ Lozykowski, ME Kordesch
Physica E: Low-Dimensional Systems and Nanostructures 39 (2), 258-261, 2007
35 2007