| The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature SA Yerişkin, M Balbaşı, İ Orak Journal of Materials Science: Materials in Electronics 28, 14040-14048, 2017 | 107 | 2017 |
| Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method G Ersöz, İ Yücedağ, Y Azizian-Kalandaragh, İ Orak, Ş Altındal IEEE Transactions on Electron Devices, 2016 | 93 | 2016 |
| The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique I Orak, A Kocyigit, A Turut Journal of Alloys and Compounds 691, 873-879, 2017 | 90 | 2017 |
| Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures O Çiçek, HU Tecimer, SO Tan, H Tecimer, İ Orak, Ş Altındal Composites Part B: Engineering 113, 14-23, 2017 | 79 | 2017 |
| Electrical characterizations of Au/ZnO/ n-GaAs Schottky diodes under distinct illumination intensities T SO, UT H, Ç O, T H, O İ, A Ş Journal of Materials Science: Materials in Electronics, 2016 | 63 | 2016 |
| The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes A Karabulut, İ Orak, A Türüt Solid-State Electronics 144, 39-48, 2018 | 55 | 2018 |
| Electrical characteristics of atomic layer deposited Au/Ti/HfO 2/n-GaAs MIS diodes in the wide temperature range A Turut, DE Yıldız, A Karabulut, İ Orak Journal of Materials Science: Materials in Electronics, 7839–7849, 2020 | 50 | 2020 |
| Electrical and dielectric characterization of Au/ZnO/n–Si device depending frequency and voltage I Orak, A Kocyigit, Ş Alindal Chinese Physics B 26 (2), 028102, 2017 | 48 | 2017 |
| Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature A Kocyigit, I Orak, Z Çaldıran, A Turut Journal of Materials Science: Materials in Electronics 28, 17177-17184, 2017 | 46 | 2017 |
| Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol … HG Çetinkaya, Ş Altındal, I Orak, I Uslu Journal of Materials Science: Materials in Electronics 28, 7905-7911, 2017 | 42 | 2017 |
| Electric and dielectric properties of Au/ZnS-PVA/n-Si (MPS) structures in the frequency range of 10–200 kHz N Baraz, İ Yücedağ, Y Azizian-Kalandaragh, G Ersöz, I Orak, Ş Altındal, ... Journal of Electronic Materials 46, 4276-4286, 2017 | 40 | 2017 |
| Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts K Ejderha, A Zengin, I Orak, B Tasyurek, T Kilinc, A Turut Materials science in semiconductor processing 14 (1), 5-12, 2011 | 38 | 2011 |
| On the frequency and voltage-dependent profiles of the surface states and series resistance of Au/ZnO/n-Si structures in a wide range of frequency and voltage A Nikravan, Y Badali, Ş Altındal, İ Uslu, İ Orak Journal of Electronic Materials 46, 5728-5736, 2017 | 36 | 2017 |
| The structural and electrical characterization of Al/GO-SiO 2/p-Si photodiode A Kocyigit, İ Karteri, I Orak, S Uruş, M Çaylar Physica E: Low-dimensional Systems and Nanostructures 103, 452-458, 2018 | 35 | 2018 |
| Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature S Demirezen, I Orak, Y Azizian-Kalandaragh, Ş Altındal Journal of Materials Science: Materials in Electronics 28, 12967-12976, 2017 | 35 | 2017 |
| The performances photodiode and diode of ZnO thin film by atomic layer deposition technique İ Orak Solid State Communications 247, 17-22, 2016 | 35 | 2016 |
| The Analysis of the Electrical and Photovoltaic Properties of Cr/p-Si Structures Using Current-Voltage Measurements İ Orak, A Kocyiğit, Ş Karataş Silicon 10 (5), 2109-2116, 2018 | 34 | 2018 |
| Frequency dependent electrical characteristics and origin of anomalous capacitance–voltage (C–V) peak in Au/(graphene-doped PVA)/n-Si capacitors SA Yerişkin, M Balbaşı, İ Orak Journal of Materials Science: Materials in Electronics 28, 7819-7826, 2017 | 33 | 2017 |
| Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN Structures H Doğan, N Yıldırım, İ Orak, S Elagöz, A Turut Physica B: Condensed Matter 457, 48-53, 2015 | 33 | 2015 |
| Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode DE Yıldız, A Karabulut, I Orak, A Turut Journal of Materials Science: Materials in Electronics 32, 10209-10223, 2021 | 31 | 2021 |
Abdulmecit TürütProf. Dr.Dirección de correo verificada de medeniyet.edu.tr
