| The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes H Kanbur, Ş Altındal, A Tataroğlu applied surface science 252 (5), 1732-1738, 2005 | 104 | 2005 |
| The determination of interface states and series resistance profile of Al/polymer/PEDOT-PSS/ITO heterojunction diode by I–V and C–V methods R Şahingöz, H Kanbur, M Voigt, C Soykan Synthetic Metals 158 (17-18), 727-731, 2008 | 88 | 2008 |
| Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes DE Yıldız, Ş Altındal, H Kanbur Journal of Applied Physics 103 (12), 2008 | 84 | 2008 |
| On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes Ş Altındal, H Kanbur, İ Yücedağ, A Tataroğlu Microelectronic engineering 85 (7), 1495-1501, 2008 | 83 | 2008 |
| Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures Ş Altındal, H Kanbur, DE Yıldız, M Parlak Applied surface science 253 (11), 5056-5061, 2007 | 76 | 2007 |
| The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2) Ş Altındal, H Kanbur, A Tataroğlu, MM Bülbül Physica B: Condensed Matter 399 (2), 146-154, 2007 | 59 | 2007 |
| ALD TiO2 thin film as dielectric for Al/p-Si Schottky diode SBK Aydin, DE Yildiz, HK Çavuş, R Şahingöz Bulletin of Materials Science 37, 1563-1568, 2014 | 37 | 2014 |
| Novel acid mono azo dye compound: Synthesis, characterization, vibrational, optical and theoretical investigations of 2-[(E)-(8-hydroxyquinolin-5-yl)-diazenyl]-4, 5 … M Saçmacı, HK Çavuş, H Arı, R Şahingöz, T Özpozan Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 97, 88-99, 2012 | 17 | 2012 |
| Effects of illumination on IV, CV and G/wV characteristics of Au/n-CdTe Schottky barrier diodes H Kanbur, Ş Altindal, T Mammadov, Y Şafak Journal of Optoelectronics and Advanced Materials 13 (5), 713, 2011 | 16 | 2011 |
| Yalıtkan tabakalı Al/p-Si Schottky diyotlarda elektriksel karakteristiklerin sıcaklığa bağlı incelenmesi H Kanbur Doktora Tezi, Ankara, 2008 | 13 | 2008 |
| Optical and electrical properties of new organic thin film HK Çavuş, MM Voigt, R Şahingöz Journal of Materials Science: Materials in Electronics 24, 4833-4838, 2013 | 10 | 2013 |
| Sur la distribution d'énergie des états d'interface et leur temps de relaxation et de capturer des profils de section transversale en Al/SiO2/Si-p diodes Schottky (MIS) S Altındal, H Kanbur, I Yücedag, A Tataroglu Microelectron. Eng 85, 1495-1501, 2008 | 2 | 2008 |
| AC electrical conductivity and dielectric properties of Al/NphAOEMA/PEDOT-PSS/ITO structure at different temperatures R ŞAHINGÖZ, HK ÇAVUŞ, Ş Altindal Optoelectronics and Advanced Materials-Rapid Communications 4 (November 2010 …, 2010 | 1 | 2010 |
| On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes S Altndal, H Kanbur, I Yucedag, A Tataroglu Microelectronic Engineering 85 (7), 1495-1501, 2008 | 1 | 2008 |
| Electrical characterization of Al/PTF/PEDOT: PSS/ITO heterojunction structure HK Çavuş Journal of Materials Science: Materials in Electronics 26, 5161-5165, 2015 | | 2015 |
| Electrical characterization of Al/PTF/PEDOT:PSS/ITO heterojunction structure HK Çavuş | | 2015 |
| Investigation of UV and I–V characteristics of high refractive index polymer thin film for optoelectronic applications HK Çavuş, M Çavuş, R Şahingöz Journal of Materials Science: Materials in Electronics 25, 1731-1735, 2014 | | 2014 |
| The dependence of electrical properties of Al/NphAOEMA/PEDOT-PSS/ITO structures on temperature R ŞAHINGÖZ, HK ÇAVUŞ, Ş Altindal, C Soykan, İ DÖKME Optoelectronics and Advanced Materials-Rapid Communications 4 (December 2010 …, 2010 | | 2010 |
| Effect of Gamma-ray (60Co) irradiation on the CV and G/W characteristics of Au/n-CdTe Schottky Barrier Diodes (SBDs) S Yasemin, U Habibe, M Tofig, K Hatice Fizika (Baku) 16, 2010 | | 2010 |
| On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes S Altindal, H Kanbur, I Yücedag, A Tataroglu MICROELECTRONIC ENGINEERING 85 (7), 1495-1501, 2008 | | 2008 |
