| High-Performance 1-V ZnO Thin-Film Transistors With Ultrathin, ALD-Processed ZrO2 Gate Dielectric J Yang, Y Zhang, Q Wu, C Dussarrat, J Qi, W Zhu, X Ding, J Zhang IEEE Transactions on Electron Devices 66 (8), 3382-3386, 2019 | 51 | 2019 |
| Phonon characteristics, crystal structure, and intrinsic properties of a Y(Mg1/2 Sn1/2)O3 ceramic C Xing, J Li, H Chen, H Qiao, J Yang, H Dong, H Sun, J Wang, X Yin, ... Rsc Advances 7 (56), 35305-35310, 2017 | 49 | 2017 |
| Low-temperature combustion synthesis and UV treatment processed p-type Li:NiOx active semiconductors for high-performance electronics J Yang, B Wang, Y Zhang, X Ding, J Zhang Journal of Materials Chemistry C 6 (46), 12584-12591, 2018 | 41 | 2018 |
| Enhanced stability in Zr-doped ZnO TFTs with minor influence on mobility by atomic layer deposition J Yang, Y Zhang, C Qin, X Ding, J Zhang IEEE Transactions on Electron Devices 66 (4), 1760-1765, 2019 | 31 | 2019 |
| Characteristics of ALD‐ZnO Thin Film Transistor Using H2O and H2O2 as Oxygen Sources J Yang, A Bahrami, X Ding, S Lehmann, N Kruse, S He, B Wang, ... Advanced Materials Interfaces 9 (15), 2101953, 2022 | 24 | 2022 |
| Solution-processed yttrium-doped IZTO semiconductors for high-stability thin film transistor applications Y Zhang, H Zhang, J Yang, X Ding, J Zhang IEEE Transactions on Electron Devices 66 (12), 5170-5176, 2019 | 23 | 2019 |
| Nitrogen-doped ZnO film fabricated via rapid low-temperature atomic layer deposition for high-performance ZnON transistors X Ding, J Yang, C Qin, X Yang, T Ding, J Zhang IEEE Transactions on Electron Devices 65 (8), 3283-3290, 2018 | 23 | 2018 |
| Structure, intrinsic properties and vibrational spectra of Pr(Mg1/2Sn1/2)O3 ceramic crystal H Qiao, H Sun, J Li, H Chen, C Xing, J Yang, H Dong, J Wang, X Yin, ... Scientific Reports 7 (1), 1-8, 2017 | 21 | 2017 |
| Investigation and theoretical calculation of the lattice vibrational spectra of BaZrO3 ceramic F Shi, H Dong, Q Liu, J Yang, S Ren, H Sun, J Xiong Journal of Materials Science: Materials in Electronics 28, 3467-3473, 2017 | 17 | 2017 |
| Crystal structure, phonon characteristic, and intrinsic properties of Sm(Mg1/2Sn1/2)O3 double perovskite ceramic H Chen, C Xing, J Li, H Qiao, J Yang, Q He, H Dong, J Wang, H Sun, ... Journal of Materials Science: Materials in Electronics 28 (19), 14156-14162, 2017 | 15 | 2017 |
| Low‐Temperature Atomic Layer Deposition of High‐k SbOx for Thin Film Transistors J Yang, A Bahrami, X Ding, P Zhao, S He, S Lehmann, M Laitinen, J Julin, ... Advanced Electronic Materials 8 (7), 2101334, 2022 | 14 | 2022 |
| Crystal structure, lattice vibrational characteristic, and dielectric property of Nd (Mg1/2Sn1/2)O3 ceramic F Shi, J Yang, Q Liu, ZM Qi, H Sun Materials Chemistry and Physics 200, 9-15, 2017 | 14 | 2017 |
| Crystal structure characteristics, dielectric loss, and vibrational spectra of Zn-rich non-stoichiometric Ba[(Zn1/3Nb2/3)1−xZnx]O3 ceramics J Li, C Xing, H Qiao, H Chen, J Yang, H Dong, F Shi Materials Research Express 4 (7), 075910, 2017 | 11 | 2017 |
| Improved gate bias stressing stability of IGZO thin film transistors using high-k compounded ZrO2/HfO2 nanolaminate as gate dielectric J Yang, X Yang, Y Zhang, B Che, X Ding, J Zhang Molecular Crystals and Liquid Crystals 676 (1), 65-71, 2018 | 9 | 2018 |
| A new “ammonia bath” method for realizing nitrogen doping in ZnSnO transistors Y Zhang, H Zhang, B Che, J Yang, J Zhang, X Ding IEEE Electron Device Letters 41 (3), 389-392, 2020 | 8 | 2020 |
| Encapsulation of locally welded silver nanowire with water-free ALD-SbOx for flexible thin-film transistors J Yang, A Bahrami, X Ding, S Lehmann, K Nielsch Applied Physics Letters 121 (16), 2022 | 7 | 2022 |
| Temperature gradient ZnO deposited via ALD for high-performance transistor applications B Che, H Zhang, J Yang, J Qi, X Ding, J Zhang IEEE Journal of the Electron Devices Society 8, 885-889, 2020 | 7 | 2020 |
| Low-voltage Hf-ZnO thin film transistors with Ag nanowires gate electrode and their application in logic circuit J Wu, J Yang, X Yang, X Ding IEEE Journal of the Electron Devices Society 8, 152-156, 2020 | 7 | 2020 |
| Surface modification of bismuth by ALD of antimony oxide for suppressing lattice thermal conductivity S He, J Yang, A Bahrami, X Zhang, R He, M Hantusch, S Lehmann, ... ACS Applied Energy Materials 5 (4), 4041-4046, 2022 | 6 | 2022 |
| Crystal structure characteristics, dielecric properties and vibrational spectra of Nb-rich non-stoichiometric Ba[(Zn1/3Nb2/3)1−xNbx]O3 ceramics F Shi, J Yang, Q Pan, H Dong, Q Liu, B Chu, H Sun Journal of Materials Science: Materials in Electronics 28 (15), 11455-11463, 2017 | 4 | 2017 |
Xingwei DINGShanghai UniversityVerified email at shu.edu.cn
