Moshe Gurfinkel
Moshe Gurfinkel
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In vivo recordings of brain activity using organic transistors
D Khodagholy, T Doublet, P Quilichini, M Gurfinkel, P Leleux, A Ghestem, ...
Nature communications 4 (1), 1575, 2013
High transconductance organic electrochemical transistors
D Khodagholy, J Rivnay, M Sessolo, M Gurfinkel, P Leleux, LH Jimison, ...
Nature communications 4 (1), 2133, 2013
Highly conformable conducting polymer electrodes for in vivo recordings
D Khodagholy, T Doublet, M Gurfinkel, P Quilichini, E Ismailova, P Leleux, ...
Advanced Materials 23 (36), H268, 2011
Time dependence of bias-stress-induced SiC MOSFET threshold-voltage instability measurements
AJ Lelis, D Habersat, R Green, A Ogunniyi, M Gurfinkel, J Suehle, ...
IEEE transactions on Electron Devices 55 (8), 1835-1840, 2008
Organic electrochemical transistor incorporating an ionogel as a solid state electrolyte for lactate sensing
D Khodagholy, VF Curto, KJ Fraser, M Gurfinkel, R Byrne, D Diamond, ...
Journal of Materials Chemistry 22 (10), 4440-4443, 2012
Electronic circuit reliability modeling
JB Bernstein, M Gurfinkel, X Li, J Walters, Y Shapira, M Talmor
Microelectronics Reliability 46 (12), 1957-1979, 2006
Measurement of barrier tissue integrity with an organic electrochemical transistor.
LH Jimison, SA Tria, D Khodagholy, M Gurfinkel, E Lanzarini, A Hama, ...
Advanced Materials (Deerfield Beach, Fla.) 24 (44), 5919-5923, 2012
Characterization of Transient Gate Oxide Trapping in SiC MOSFETs Using FastTechniques
M Gurfinkel, HD Xiong, KP Cheung, JS Suehle, JB Bernstein, Y Shapira, ...
IEEE Transactions on Electron Devices 55 (8), 2004-2012, 2008
High speed and high density organic electrochemical transistor arrays
D Khodagholy, M Gurfinkel, E Stavrinidou, P Leleux, T Herve, S Sanaur, ...
Applied Physics Letters 99 (16), 2011
Time-Dependent Dielectric Breakdown of 4H-SiC/ MOS Capacitors
M Gurfinkel, JC Horst, JS Suehle, JB Bernstein, Y Shapira, KS Matocha, ...
IEEE transactions on device and materials reliability 8 (4), 635-641, 2008
Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements
HD Xiong, D Heh, M Gurfinkel, Q Li, Y Shapira, C Richter, G Bersuker, ...
Microelectronic Engineering 84 (9-10), 2230-2234, 2007
Energy-and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs
S Potbhare, N Goldsman, A Akturk, M Gurfinkel, A Lelis, JS Suehle
IEEE Transactions on Electron Devices 55 (8), 2061-2070, 2008
P. leleux, A. Ghestem, e. ismailova, T. Hervé, S. Sanaur, C. Bernard, GG Malliaras
D Khodagholy, T Doublet, P Quilichini, M Gurfinkel
Nat. Commun 4, 1575, 2013
Ultra-fast characterization of transient gate oxide trapping in SiC MOSFETs
M Gurfinkel, J Suehle, JB Bernstein, Y Shapira, AJ Lelis, D Habersat, ...
2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007
Ultra-fast measurements of VTH instability in SiC MOSFETs due to positive and negative constant bias stress
M Gurfinkel, J Suehle, JB Bernstein, Y Shapira, AJ Lelis, D Habersat, ...
2006 IEEE International Integrated Reliability Workshop Final Report, 49-53, 2006
Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs
M Gurfinkel, M Borenshtein, A Margulis, S Sade, Y Fefer, Y Weizman, ...
Applied surface science 248 (1-4), 62-65, 2005
Stress-induced defect generation in HfO2/SiO2stacks observed by using charge pumping and low frequency noise measurements
HD Xiong, D Heh, S Yang, X Zhu, M Gurfinkel, G Bersuker, DE Ioannou, ...
2008 IEEE International Reliability Physics Symposium, 319-323, 2008
Enhanced gate induced drain leakage current in HfO2 MOSFETs due to remote interface trap-assisted tunneling
M Gurfinkel, JS Suehle, JB Bernstein, Y Shapira
2006 International Electron Devices Meeting, 1-4, 2006
Enhanced gate induced drain leakage current in HfO2 MOSFETs
M Gurfinkel, JS Suehle, Y Shapira
Microelectronic engineering 86 (11), 2157-2160, 2009
Ion implantation and SiC transistor performance
M Gurfinkel, S Potbhare, HD Xiong, JS Suehle, Y Shapira, AJ Lelis, ...
Journal of Applied Physics 105 (8), 2009
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