Seguir
ismail Altuntaş
ismail Altuntaş
Dirección de correo verificada de cumhuriyet.edu.tr
Título
Citado por
Citado por
Año
The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in GaAs/InxGa1-xAs/GaAs square quantum well
P Başer, I Altuntas, S Elagoz
Superlattices and Microstructures 92, 210-216, 2016
372016
Structural and electrical properties of nitrogen-doped ZnO thin films
ES Tuzemen, K Kara, S Elagoz, DK Takci, I Altuntas, R Esen
Applied Surface Science 318, 157-163, 2014
252014
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
I Altuntas, MN Kocak, G Yolcu, HF Budak, AE Kasapoğlu, S Horoz, E Gür, ...
Materials Science in Semiconductor Processing 127, 105733, 2021
192021
Optical and structural properties of In-rich InxGa1− xAs epitaxial layers on (1 0 0) InP for SWIR detectors
B Smiri, MB Arbia, D Ilkay, F Saidi, Z Othmen, B Dkhil, A Ismail, E Sezai, ...
Materials Science and Engineering: B 262, 114769, 2020
192020
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ...
Superlattices and Microstructures 111, 1177-1194, 2017
192017
Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural …
H Dakhlaoui, I Altuntas, ME Mora-Ramos, F Ungan
The European Physical Journal Plus 136 (8), 894, 2021
152021
Combined effects of electric, magnetic, and intense terahertz laser fields on the nonlinear optical properties in GaAs/GaAlAs quantum well with exponentially confinement potential
I Altuntas, H Dakhlaoui, ME Mora-Ramos, F Ungan
The European Physical Journal Plus 136 (11), 1174, 2021
142021
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
M Genç, V Sheremet, M Elçi, AE Kasapoğlu, İ Altuntaş, İ Demir, G Eğin, ...
Superlattices and Microstructures 128, 9-13, 2019
142019
The effects of two-stage HT-GaN growth with different V/III ratios during 3D–2D transition
I Altuntas, I Demir, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz
Journal of Physics D: Applied Physics 51 (3), 035105, 2017
142017
In concentration dependence of shallow impurity binding energy under the hydrostatic pressure
P Baser, I Altuntas, S Elagoz
Fen Bilimleri Dergisi 23 (4), 171, 2011
142011
Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential
I Altuntas
The European Physical Journal B 94 (9), 177, 2021
132021
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 113, 623-634, 2018
132018
Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
I Demir, I Altuntas, B Bulut, M Ezzedini, Y Ergun, S Elagoz
Semiconductor Science and Technology 33 (5), 055005, 2018
112018
InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
V Sheremet, N Gheshlaghi, M Sözen, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 116, 253-261, 2018
112018
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
I Simsek, G Yolcu, MN Koçak, K Pürlü, I Altuntas, I Demir
Journal of Materials Science: Materials in Electronics 32, 25507-25515, 2021
102021
In-situ and ex-situ face-to-face annealing of epitaxial AlN
MN Koçak, KM Pürlü, İ Perkitel, İ Altuntaş, İ Demir
Vacuum 203, 111284, 2022
82022
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
KM Pürlü, MN Kocak, G Yolcu, I Perkitel, İ Altuntaş, I Demir
Materials Science in Semiconductor Processing 142, 106464, 2022
82022
The Effect of Si (111) Substrate Surface Cleaning on Growth Rate and Crystal Quality of MOVPE Grown AlN
İ PERKİTEL, İ ALTUNTAS, İ DEMİR
Gazi University Journal of Science, 1-1, 2021
82021
Microstructural evolution of MOVPE grown GaN by the carrier gas
I Demir, I Altuntas, AE Kasapoğlu, S Mobtakeri, E Gür, S Elagoz
Semiconductors 52, 2030-2038, 2018
82018
Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature
HM M. B. Ullah, V. Avrutin, T. Nakagawara, S. Hafiz, I. Altuntaş, Ü. Özgür
Journal of Applied Physics 121 (18), 185704, 2017
82017
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20