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Max Kneiß
Max Kneiß
Otros nombresMax Kneiss, Max Kneib
Dirección de correo verificada de physik.uni-leipzig.de
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Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film
C Yang, D Souchay, M Kneiß, M Bogner, HM Wei, M Lorenz, O Oeckler, ...
Nature communications 8 (1), 16076, 2017
3602017
Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit
C Yang, M Kneiβ, M Lorenz, M Grundmann
Proceedings of the National Academy of Sciences 113 (46), 12929-12933, 2016
2352016
Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 109
C Yang, M Kneiß, FL Schein, M Lorenz, M Grundmann
Scientific reports 6 (1), 21937, 2016
1422016
Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality
M Kneiß, A Hassa, D Splith, C Sturm, H Von Wenckstern, T Schultz, ...
APL Materials 7 (2), 2019
1292019
Heteroepitaxial growth of α-, β-, γ-and κ-Ga2O3 phases by metalorganic vapor phase epitaxy
V Gottschalch, S Merker, S Blaurock, M Kneiß, U Teschner, M Grundmann, ...
Journal of Crystal Growth 510, 76-84, 2019
732019
Epitaxial stabilization of single phase κ-(InxGa1− x) 2O3 thin films up to x= 0.28 on c-sapphire and κ-Ga2O3 (001) templates by tin-assisted VCCS-PLD
M Kneiß, A Hassa, D Splith, C Sturm, H Von Wenckstern, M Lorenz, ...
APL materials 7 (10), 2019
562019
Structural, optical, and electrical properties of orthorhombic κ-(InxGa1− x) 2O3 thin films
A Hassa, H Von Wenckstern, D Splith, C Sturm, M Kneiß, V Prozheeva, ...
APL Materials 7 (2), 2019
492019
Control of phase formation of (AlxGa1− x) 2O3 thin films on c-plane Al2O3
A Hassa, C Wouters, M Kneiß, D Splith, C Sturm, H von Wenckstern, ...
Journal of Physics D: Applied Physics 53 (48), 485105, 2020
352020
Epitaxial κ-(AlxGa1− x) 2O3 thin films and heterostructures grown by tin-assisted VCCS-PLD
P Storm, M Kneiß, A Hassa, T Schultz, D Splith, H Von Wenckstern, ...
APL Materials 7 (11), 2019
352019
A Review of the Segmented‐Target Approach to Combinatorial Material Synthesis by Pulsed‐Laser Deposition
H von Wenckstern, M Kneiß, A Hassa, P Storm, D Splith, M Grundmann
physica status solidi (b) 257 (7), 1900626, 2020
342020
Solubility limit and material properties of a κ-(AlxGa1− x) 2O3 thin film with a lateral cation gradient on (00.1) Al2O3 by tin-assisted PLD
A Hassa, C Sturm, M Kneiß, D Splith, H Von Wenckstern, T Schultz, ...
APL Materials 8 (2), 2020
322020
Suppression of Grain Boundary Scattering in Multifunctional p‐Type Transparent γ‐CuI Thin Films due to Interface Tunneling Currents
M Kneiß, C Yang, J Barzola‐Quiquia, G Benndorf, H von Wenckstern, ...
Advanced Materials Interfaces 5 (6), 1701411, 2018
322018
Growth, structural and optical properties of coherent κ-(AlxGa1− x) 2O3/κ-Ga2O3 quantum well superlattice heterostructures
M Kneiß, P Storm, A Hassa, D Splith, H Von Wenckstern, M Lorenz, ...
APL Materials 8 (5), 2020
302020
Realization of highly rectifying Schottky barrier diodes and pn heterojunctions on κ-Ga2O3 by overcoming the conductivity anisotropy
M Kneiß, D Splith, P Schlupp, A Hassa, H Von Wenckstern, M Lorenz, ...
Journal of Applied Physics 130 (8), 2021
292021
Modeling the electrical transport in epitaxial undoped and Ni-, Cr-, and W-doped TiO2 anatase thin films
M Kneiß, M Jenderka, K Brachwitz, M Lorenz, M Grundmann
Applied Physics Letters 105 (6), 2014
292014
Combinatorial material science and strain engineering enabled by pulsed laser deposition using radially segmented targets
M Kneiß, P Storm, G Benndorf, M Grundmann, H von Wenckstern
ACS Combinatorial Science 20 (11), 643-652, 2018
282018
Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range
A Hassa, P Storm, M Kneiß, D Splith, H von Wenckstern, M Lorenz, ...
physica status solidi (b) 258 (2), 2000394, 2021
252021
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1− x) 2O3 for x= 0.25–0.74
C Fares, M Kneiß, H von Wenckstern, M Grundmann, M Tadjer, F Ren, ...
APL materials 7 (7), 2019
232019
Band Offsets at κ-([Al,In]xGa1–x)2O3/MgO Interfaces
T Schultz, M Kneiss, P Storm, D Splith, H von Wenckstern, M Grundmann, ...
ACS Applied Materials & Interfaces 12 (7), 8879-8885, 2020
212020
Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x) 2O3 for x= 0.2-0.65
C Fares, M Kneiß, H von Wenckstern, M Tadjer, F Ren, E Lambers, ...
ECS Journal of Solid State Science and Technology 8 (6), P351, 2019
182019
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